? 2005 ixys all rights reserved g = gate d = drain s = source tab = drain ds99446(08/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 50 a 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 1.4 pulse test, t 300 s, duty cycle d 2 % polarhv tm power mosfet advance technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density ixta 5n50p ixtp 5n50p ixty 5n50p v dss = 500 v i d25 = 4.8 a r ds(on) 1.4 symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 4.8 a i dm t c = 25 c, pulse width limited by t jm 10 a i ar t c = 25 c5a e ar t c = 25 c20mj e as t c = 25 c 250 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 20 p d t c = 25 c89w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c to-263 package for 10s m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 3 g to-252 0.8 g to-263 (ixta) g s (tab) to-220 (ixtp) d (tab) g s to-252 (ixty) g s (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 ixta 5n50p ixtp 5n50p ixty 5n50p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 3.0 4.7 s c iss 620 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 72 pf c rss 6.3 pf t d(on) 18 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 18 ns t d(off) r g = 20 (external) 45 ns t f 16 ns q g(on) 12.6 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 4.3 nc q gd 5.0 nc r thjc 1.4 k/w r thck (to-220) 0.25 k/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 5 a i sm repetitive 15 a v sd i f = i s , v gs = 0 v, -di/dt = 100 a/ s 1.5 v t rr pulse test, t 300 s, duty cycle d 2 % 400 ns to-252 (ixty) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline pins: 1 - gate 2,4 - drain 3 - source dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 to-220 (ixtp) outline pins: 1 - gate 2,4 - drain 3 - source pins: 1 - gate 2,4 - drain 3 - source
? 2005 ixys all rights reserved ixta 5n50p ixtp 5n50p ixty 5n50p fig. 2. extended output characteristics @ 25 o c 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 3. output characteristics @ 125 o c 0 1 2 3 4 5 024681012141618 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 1. output characteristics @ 25 o c 0 1 2 3 4 5 012345678 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 5a i d = 2.5a v gs = 10v fig. 6. drain current vs. case temperature 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.6 1 1.4 1.8 2.2 2.6 3 3.4 012345678910 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 ixta 5n50p ixtp 5n50p ixty 5n50p fig. 11. capacitance 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 02468101214 q g - nanocoulombs v g s - volts v ds = 250v i d = 2.5a i g = 10ma fig. 7. input adm ittance 0 1 2 3 4 5 6 7 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 1 2 3 4 5 6 7 8 9 01234567 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 3 6 9 12 15 0.4 0.5 0.6 0.7 0.8 0.9 1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 0.1 1 10 100 10 100 1000 v d s - volts i d - amperes 10 0 s 1m s dc t j = 150 o c t c = 25 o c r ds(on) limit 10 m s 25s
? 2005 ixys all rights reserved ixta 5n50p ixtp 5n50p ixty 5n50p fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w
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